| PART |
Description |
Maker |
| WE128K32-XH1X WE128K32-XG2TX WE128K32NP-200H1Q WE1 |
EEPROM MCP
128K X 32 EEPROM 5V MODULE, 200 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 1.075 x 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 150 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 140 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
|
Microsemi, Corp.
White Electronic Designs, Corp.
|
| 1N914UR JANTXV1N914UR |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.075; Cj (pF): 4; Vrwm (V): 75; trr (nsec): 5; VF (V): 0.8; IR (µA): 0.5; 0.075 A, SILICON, SIGNAL DIODE
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| WS128K32NV-17H1MA WS128K32NV-17H1C WS128K32NV-17H1 |
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
|
Microsemi, Corp.
White Electronic Designs, Corp.
|
| FQD20N06LTF FQD20N06LTM |
17.2 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD SEMICONDUCTOR CORP
|
| APT50M75B2LL APT50M75LLL |
POWER MOS 7 500V 57A 0.075 Ohm
|
Advanced Power Technology
|
| 308016983300000 308016983200000 308016983400000 30 |
Series 8016 . .075 x .130 x .150 Grid Pattern
Series 8016 ?.075 x .130 x .150 Grid Pattern
|
AVX Corporation
|
| SPD30P06P-E4-E6327 |
30 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 ROHS COMPLIANT PACKAGE-3
|
Infineon Technologies AG
|
| STC08DE150HP C08DE150HP |
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 ohm
|
STMICROELECTRONICS[STMicroelectronics]
|
| 0537800370 |
1.25mm (.049) Pitch PanelMate Header, Surface Mount, Right Angle, 1.90mm(.075) Height, Lead-free, 3 Circuits
1.25mm (.049") Pitch PanelMate垄芒 Header, Surface Mount, Right Angle, 1.90mm(.075") Height, Lead-free, 3 Circuits
|
Molex Electronics Ltd.
|
| 533189-3 |
.050, .075, .100 Box Connectors; BX RCPT ASY 40 POS STAG ( AMP )
|
Tyco Electronics
|
| 51-25-1005 0051-25-1005 051-25-1012 0051251005 WM2 |
.075 PITCH LFH INSERT - MOLDED TERMINAL STRIP 24 CKT. MALE (SALES DWG)
|
Molex Electronics Ltd.
|
| AUIRFU024N AUIRFR024NTRR AUIRFR024NTRL |
17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Advanced Planar Technology
Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
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